smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter features 60 volt v ceo. 3 amp continuous current. low saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v continuous collector current i cm -6 a peak pulse current i c -3 a power dissipation p tot 2w operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FZT751 smd type transistors smd type product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -80 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -60 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 v collector cut-off current i cbo v cb =-60v v cb =-60v,ta = 100 -0.1 -10 a emitter cut-off current i ebo v eb =-4v -0.1 a collector-emitter saturation voltage * v ce( sat) i c =-1a, i b =-100ma i c =-3a, i b =-300ma -0.15 -0.45 -0.3 -0.6 v base-emitter saturation voltage * v be( sat) i c =-1a, i b =-100ma -0.9 -1.25 v base-emitter on voltage * v be(on )i c =-1a, v ce =-2v -0.8 -1.0 v i c =-50ma, v ce =-2v* 70 200 i c =-500ma, v ce =-2v* 100 200 300 i c =-1a, v ce =-2v* 80 170 i c =-2a, v ce =-2v* 40 150 transitional frequency f t i c =-100ma, v ce =-5v, f=100mhz 100 140 mhz output capacitance c obo v cb =-10v, f=1mhz 30 pf turn-on time t (on) i c =-500ma, v cc =-10v 40 ns turn-off time t (off) i b1 =i b2 =-50ma 450 ns * pulse test: tp = 300 s; d 0.02. collector cut-off current transfer ratio * h fe marking marking FZT751 FZT751 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type product specification 4008-318-123
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